N-Channel Enhancement Mode Field Effect Transistor
General Description
Greenchip adopts advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Typical information
V(BR)DSS | RDS(ON)typ | ID |
30V | 3.5mΩ | 80A |
ESD protect
PDFN-8L
Features
· VDS=30V, ID=80A
RDS(on) < 4.3 mΩ @ VGS = 10V
RDS(on) < 6.8 mΩ @ VGS =4.5V
· Green Device Available
· Low Gate Charge
· Advanced High Cell Density Trench Technology
· 100% EAS Guaranteed
Applications
Power Management Switches
Synchronous Buck Converter
ABSOLUTE MAXIMUN RATINGS
PARAMETERS/TEST CONDITIONS | SYMBOL | LIMITS | UNITS |
Drain-Source Voltage | VDSS | 30 | V |
Continuous Drain Current | ID | 80 | A |
Continuous Drain Current TC = 100 °C | ID | 52 | A |
Pulsed Drain Current | IDM ① | 180 | A |
Gate-Source Voltage | VGS | ±20 | V |
Avalanche Energy, Single Pulse | EAS ② | 306 | mJ |
Avalanche Energy, Repetitive | EAR ① | 100 | mJ |
Avalanche Current, Repetitive | IAR ① | 20 | A |
Power Dissipation | PD | 80 | W |
Operating and Storage Temperature Range | TJ、TSTG | -55 to 150 | ℃ |
*Drain current is limited by maximum junction temperature
Package Outline Dimensions
TO-220F
TO-220
PDFN5*6
TO-252
