N-Channel Enhancement Mode Field Effect Transistor
General Description
Greenchip adopts advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Typical information
V(BR)DSS | RDS(ON)typ | ID |
60V | 1.6mΩ | 250A |
Features
· Low FOM
· Fast switching speed
· 100% EAS Guaranteed
Applications
· BMS
· Motor Driver
· Power Switch
· Power management
ESD protect
PDFN-8L
ABSOLUTE MAXIMUN RATINGS
PARAMETERS/TEST CONDITIONS | SYMBOL | LIMITS | UNITS |
Drain-Source Voltage | VDS | 60 | V |
Gate-Source Voltage | VGS | ±20 | V |
Drain Current-Continuous | Id | 250 | A |
Drain Current-Continuous(Tc=100℃) | Id(Tc=100℃) | 160 | A |
Pulsed Drain Current(note1) | IDM | 800 | A |
Maximum Power Dissipation | PD | 260 | W |
Avalanche Energy(note2) | EAS | 420 | mJ |
Thermal Resistance from Junction to Case | RθJC | 0.45 | ℃/W |
Thermal resistance,junction-ambient.Max | RθJA | 30 | ℃/W |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55~175 | ℃ |
*Drain current is limited by maximum junction temperature
Package Outline Dimensions
TO-220F
TO-220
PDFN5*6
TO-252
