Features
n Gen IV technology
n JEDEC-qualified GaN technology
n Dynamic RDS(on)eff production tested
n Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
n Very low QRR
n Reduced crossover loss
n RoHS compliant and Halogen-free packaging
Product Summary |
VDSS | 650 | V |
RDS(on), typ | 150 | mΩ |
QG, typ | 8 | nC |
QRR, typ | 40 | nC |
Applications
n Consumer
n Power adapters
n Low power SMPS
n Lighting
Main Characteristics
VDS | 650 V |
RDS(ON) | 180 mΩ |
Current@TC=25°C b | 13 A |
Product Information
(1) DFN 5X6-Dual Punch
Pin No. | Name | Function |
1 | G | Gate |
2 | D | Drain |
3 | S | Source |
(2) DFN 8X8
Pin No. | Name | Function |
1 | G | Gate |
2 | D | Drain |
3 | S | Source |
Device lnformation
Part Number | package | packing |
GN3065T4ZG | DFN5*6 | Tape 4K/reel |
GN3065T5ZG | DFN8*8 | Tape 3K/reel |
